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cf4 leak rate toshiba

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  • Annual leakage rate (%) for the refrigeration/air-con/HVAC

    Oct 24, 2017Annual Leakage Rate: Domestic Refrigeration: 0.1 - 0.5 %: Stand-Alone Commercial Applications: 1 - 10 %: Medium and Large Commercial refrigeration: 10 - 30 %: Transport Refrigeration: 15 - 50 %: Industrial Refrigeration including Food Processing and Cold Storage: 7 - 25 %: Chillers: 2 - 15 %: Residential and Commercial A/C, including Heat Pumps

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  • Yasuhiro Horiikes research works | Toshiba Corporation

    Si and SiO2 reactive ion etching and the associated radiation damage were investigated employing CF4 in the low self-bias voltage region (less than 100 V). Toshiba has developed high etch rate

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  • Polymeric Membranes for Medical Applications

    and membrane should form a dense, air free, and leak tight. (CF4), perfluorohexane (C6F14), dichloromethane (DCM) and water (H2O). Toshiba) has been utilized to analyze in vitro the flow

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  • (WFKLQJDQG6DFULILFLDO2[LGDWLRQ

    of Rms and the etching rate vs the oxygen (02) flow rate used in the CDE process which was carried out after the RIE pro- cess. The CF4 flow rate was fixed at 100 sccm and the etching time was fixed at 15 min. The Rms values were 1.7, 1.3, 9.9 and 10.9 nm at 02 flow ratesCited by: 23

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  • US6436230B1 - Process device - Google Patents

    US6436230B1 US09/717,279 US71727900A US6436230B1 US 6436230 B1 US6436230 B1 US 6436230B1 US 71727900 A US71727900 A US 71727900A US 6436230 B1 US6436230 B1 US 6436230B1 Authority US United States Prior art keywords shield plate chamber ring magnet dipole ring magnetic flux Prior art date 1999-11-26 Legal status (The legal status is an assumption and is not a

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  • Typical Etch Recipes - Pennsylvania State University

    Cl2 / CF4 / Ar Cr / Au LPCVD Si • SF6 / O2 / Ar PECVD Si Bulk Si. Oxide. Nitride. Oxynitride. Quartz. Glass. Oxide Recipe •Gases: •CF4: 45 sccm • O2: 5 sccm •Power: 350 watts •Pressure: 150mT •Etch Rate: ~1500 Å / min Nitride Recipe •Gases: •CF4: 45 sccm • O2: 5 sccm

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  • A review on SF6 substitute gases and research status of

    Nov 01, 2018The health damage caused by SF 6 and its by-products obviously exist. In 1990, Kraut and Lilis reported six workers who contacted SF 6 decomposition products in an appliance repair facility; the workers were exposed without protection in a closed space for more than 6 h (Kraut and Lilis, 1990).The initial symptoms included shortness of breath, chest tightness, coughing, eye and nose

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  • EP1719735B1 - Ozone generator and ozone generating

    EP1719735B1 EP04807008.0A EP04807008A EP1719735B1 EP 1719735 B1 EP1719735 B1 EP 1719735B1 EP 04807008 A EP04807008 A EP 04807008A EP 1719735 B1 EP1719735 B1 EP 1719735B1 Authority EP European Patent Office Prior art keywords ozone gas discharge oxygen dielectric Prior art date 2004-02-25 Legal status (The legal status is an assumption and is not a legal

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  • CVD of fluorosilicate glass for ULSI - ScienceDirect

    Dec 01, 1995Studies have used CF4 and SiF4 as fluorine reagents in HDP CVD. If SiF4 mixes with oxygen in the reactor, it can also be the source for Si in the glass. The addition of silane to this process as a second silicon precursor doubles the deposition rate. When using CF4 as the fluorine source, TEOS has been used as a precursor.

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  • T. Daibous research works | Toshiba Corporation, Tokyo

    T. Daibous 39 research works with 868 citations and 1,835 reads, including: 1×- to 2×-nm MTJ switching at sub-3 ns pulses with compatible current in sub-20 nm CMOS for high performance embedded

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  • pp. A-7-4

    Extended Abstracts of the lSth (1986 International) Conference on Solid State Devices and Materials, Tokyo, 19g6, pp. 257-260 Thermodynamical Approach to a New High Dielectric Capacitor Structure: W/HfOz/W KEISAKU YAMADA VLSI Research Center Toshiba CorporationrKawasaki, Japan 1. Introduction In recent years, high dielectric films have become i.nteresting for use as storage capaeitor

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  • EP0869545A2 - Selective plasma etching of silicon nitride

    A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH 3 F/CF 4 /O 2 recipe and a CH 2 F 2 /CF 4 /O 2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material.

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  • US6893969B2 - Use of ammonia for etching organic low-k

    Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly

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  • NiSi salicide technology for scaled CMOS | Request PDF

    For 3 nm Ni, NiSi2 was formed on Si substrates with and without CF4 PIII at temperature as low as 400℃. For 6 nm Ni, NiSi was formed on pure Si, while epitaxial NiSi2 was obtained on CF4 PIII Si.

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  • Tuner Information Center - Shootouts

    Inside the 990D, we see it uses an LA3350 MPX chip to generate the subcarrier, but the actual Direct Pure linear multiplier MPX work is done with an MC1495L. There are also four 4560 op-amps on the board, with the MPX used to buffer the audio signals. I found three ceramic filters marked CF1, CF3 and CF4. I could not find a CF2.

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  • US20050003676A1 - Use of ammonia for etching organic

    Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly

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  • Tuner Information Center - Sansui Tuners

    Both use a 2043 op-amp in the composite signal path and both feed an LA3450. From the LA3450 out the Denon seems to have a much more direct/cleaner signal path and buffer. The X701 and X711 have 4 ceramic filters: CF1 and CF2 are SFE10.7MX filters which I believe have a 250 kHz bandwidth, and CF3 and CF4 are SFE10.7MS2 filters which are 230s.

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  • HYDRAULIC OILS - Gulf Harmony 32/46/68 Manufacturer

    Manufacturer of HYDRAULIC OILS - Gulf Harmony 32/46/68, Gulf Harmony AW Plus 32/46/68, Gulf Harmony ZF Plus 32/46/68 and Gulf Harmony AW Plus 46/68 Toshiba Machine offered by Dynamo Industrial Solutions, Gurgaon, Haryana.

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  • US Patent for Semiconductor device and manufacturing

    FIG. 7 is a graph showing the relationship between the etching rate and the substrate temperature under conditions such as a CF4 flow rate of 25 cc/min and a pressure of 0.3 Torr. As is apparent from FIG. 7, when the substrate temperature is 0& C. for less, the etching rate is too small for practical use.

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  • SF6 gas Mixtures pressure for subway

    breakdown voltage of SF6/CF4 mixtures as add CF4 gas to SF6 gas (0.1MPa). All SF6/CF4 mixtures which have SF6 gas of 0.01MPa satisfied the standard of 25.8kV GIS in power frequency withstand voltage test. Mixed gas of SF6 (0.01MPa) and CF4 (0.01~0.06MPa) show more good dielectric characteristics than pure CF4 gas (0.2MPa) in impulse and. Get Price

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  • COLD-WEATHER APPLICATION OF GAS MIXTURE

    2.4 Gas Leakage Rate Today’s gas-filled circuit breakers have very small leakage rates (<0.5% per year at 20oC). Sealing at low temperatures must be very carefully and precisely engineered; proper materials must be used for gaskets to ensure seals reseal effectively following deformation associated with operation of the circuit breaker.

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  • SF6 gas Mixtures Tender industry

    breakdown voltage of SF6/CF4 mixtures as add CF4 gas to SF6 gas (0.1MPa). All SF6/CF4 mixtures which have SF6 gas of 0.01MPa satisfied the standard of 25.8kV GIS in power frequency withstand voltage test. Mixed gas of SF6 (0.01MPa) and CF4 (0.01~0.06MPa) show more good dielectric characteristics than pure CF4 gas (0.2MPa) in impulse and. Get Price

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  • TechPowerUp

    These chips are Micron-made 8 Gbit GDDR6, specified for 14 Gb/s data rate, operating at 1.35 V. With twelve chips, this board has a 384-bit memory bus and 12 GB VRAM. The memory bandwidth at 14 Gbps data rate is a staggering 672 GB/s, which conclusively beats the 484 GB/s that Vega 64

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  • Environmental Protection And Development Trend Of High

    Apr 08, 2010Toshiba also N2 SF6 mixed gas circuit breaker is studied. 4, in the equipment manufacturing and equipment maintenance during the use of advanced SF6 gas recovery unit, the recovery through a variety of filters to remove the SF6 gas in the water, oils, dust, and other elements resultant decomposition.

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  • SF6 gas Mixtures Reclaim factory

    Sf6 Gas, Six Sulphur Fluoride, Leak Detector manufacturer / supplier in China, offering Sf6 Gas Leak Detector for Dead Tank or Live Tank Sf6 Circuit Breaker, Two-Semi-Trailer Mobile Substations (230/ 66/20) Kv with One 66 Kv Gis Incoming and One 20 Kv Gis Incoming Metal Enclosure Without Truck., 72.5kv 40mva Mobile Substation and so on. Get Price

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  • HITACHI SJ700-2 INSTRUCTION MANUAL Pdf Download |

    Page 111 (1) Binary operation mode Assign functions 02 (CF1) to 05 (CF4) individually to the terminal [1] to [8] functions (C001 to C008) to make multispeed s 0 to 15 available for selection. Specify the desired frequencies for speeds 1 to 15 by setting multispeeds 1 to 15 (A021 to A035).

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  • Butan Gas Refriger Suppliers, Manufacturer, Distributor

    Alibaba offers 5 Butan Gas Refriger Suppliers, and Butan Gas Refriger Manufacturers, Distributors, Factories, Companies. Find high quality Butan Gas Refriger Suppliers on Alibaba.

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  • Bill Text - SB-1371 Natural gas: leakage abatement.

    Sep 21, 2014(6) To the extent feasible, require the owner of each commission-regulated gas pipeline facility that is an intrastate transmission or distribution line to calculate and report to the commission and the State Air Resources Board a baseline systemwide leak rate, along with any data and computer models used in making that calculation, to

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  • Proceedings of the Ninth International Cryogenic

    May 14, 1982No remarkable time dependent heat leak has been observed. By demagnetization from 7.8 T, 11 mK to 37 mT the lowest temperature of the sample cell, 0.28 mK, is obtained and the temperature below 0.5 mK is maintained more than three days. The constant heat leak is determined to be 0.4 nW from a warming up rate of the nuclear stage.

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  • SF6 gas Mixtures micro water prize

    Toufani, Experimental Studies of Breakdown Characteristics of SF6/CF4 Mixtures in Highly Non-uniform Fields for High-Voltage Applications (The University of Manitoba, Manitoba, Canada, 1997). studied the insulation properties of SF 6 and CF 4 gas mixtures at DC voltage, 60 Hz AC voltage, and standard lightning impulse voltage. Get Price

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  • What’s New in Process Technology Feb 2014 by Westwick

    TOSHIBA INTERNATIONAL CORPORATION PTY LTD NSW Toshiba International Corporation Pty Ltd 2 Morton Street, Parramatta NSW 2150 Tel: (02) 9768 6600 Fax: (02) 9890 7546

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  • Bit Cost Scalable Technology with Punch and Plug Process

    Since the first three-dimensional (3D) NAND array was proposed in 2007 by Toshiba corporation [2], alternative methods to improve the storage capacity are pursued by major memory manufacturers

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  • Global Anthropogenic Non-CO2 Greenhouse Gas Emissions

    ----- Acronyms AI Annex I AE anode effects AR4 Fourth Assessment Report BAU business as usual BOD biological oxygen demand CAG R compound annual growth rate CDM Clean Development Mechanism CEH Chemical and Economics Handbook CEIT countries with economies in transition CFC chlorofluorocarbon CF4 perfluoromethane C2p6 hexafluoroethane CsFa perfluoropropane C-C4F8

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  • Surplus and Used Industrial Parts and Equipment

    Allen Bradley 1394-SJT05-C-RL Digital Servo Controller 460v-ac 680v-ac 3ph 5kw. $1870.53

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  • Fluoride Action Network | NF3: Electronics Industry

    The waste systems might be designed to destroy 97 percent of the gas, but that is under perfect conditions. “Most [semiconductor manufacturers] don’t achieve that because they’re hurrying in production,” he says. The gas tanks themselves might leak

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  • 1st International Conference on SF6 and the Environment

    Utility Breakout Session I: Effectively Managing SF6: Leak Detection And Reduction EPRI’s SF6 Management Program , Ben Damsky, Manager, Power Electronics Systems, EPRI Experience with Infrared Leak Detection on FPL Switchgear , John Fischer, Project Manager, Florida Power Light and Dave Keith, Field Service Manager, Roberts Transformer

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  • GREASES - Gulf Crown MP3 Manufacturer from Gurgaon

    Manufacturer of GREASES - Gulf Crown MP3, Gulf Flex EP 2, Gulf Crown RR3 and Gulflex HT2 offered by Dynamo Industrial Solutions, Gurgaon, Haryana.

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  • CORROSION RESISTANCE | Professor Dr. Loutfy H

    A Systematic Study and Characterization of Advanced Corrosion Resistance Materials and Their Applications for Plasma Etching Processes in Semiconductor Silicon Wafer Fabrication Hong Shih Etch Products Group, Lam Research Corporation, Fremont,

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  • The DØ detector | Mário Vaz - Academia.edu

    Academia.edu is a platform for academics to share research papers.

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  • Global Anthropogenic Non-co2 Greenhouse Gas Emissions

    The cumulative growth rate in emissions is largest in the developing regions of the Middle East, Africa, Latin America, SE Asia, and China/CPA with growth rates of 197 percent, 104 percent, 86 percent, 64 percent, and 58 percent respectively.

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  • SF6-alternative gases for application in gas-insulated

    Mar 20, 2018The environmental problems caused by greenhouse gases have received unprecedented attention. Sulfur hexafluoride (SF 6), which is the preferred gas for use in gas-insulated switchgear (circuit breakers, disconnect switches, etc. for high-voltage electrical circuits), has a very high global warming potential, and there is a large international effort to find alternative gases.

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  • Electronic Components and Parts Search | DigiKey Electronics

    HELP Help and Support Order Status Shipping Rates/Options Returns and Order Issues Tariff Information CONTACT US 1-800-344-4539 218-681-6674 [email protected]

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  • Abstracts

    When the carbon-containing gas ratio was increased from 7% to 10 % and 13 %, both the PMMA and PS etch rates decreased. The etch rate of PMMA decreased slightly, from 42.4 to 39.6 and 38.2 nm/min, while the rate of PS decreased drastically, from 5.4 nm/min to 1.8 and 0.3 nm/min. As a result, very high selectivity could be obtained at 13 %.

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  • 1989 06 The Computer Paper - BC Edition by The - Issuu

    ATIEaatruubr ATI Saatrendu Ioral.leak Aberebraudvam PaNe3aaphe LeSlleebIS4he Sue. $33$ $449 $5N. $39. leeieaccus. SIS. faahadr+. $119 $153. PC rudeQduro —..3$3$ SNI. Isalle rvwa%slvlal — SHI

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