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sf6 o2 Transfer GE

sf6 o2 Transfer GE

SF6 shows little change in vapor pressure over a wide temperature range and is a soft gas in that it is more compressible dynamically than air. The heat transfer coefficient of SF6 is greater than air and its cooling characteristics by convection are about 1.6 times air.

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  • Green Gas for Grid - g3 - SF6 Free - GE Grid Solutions

    g³, G3 (pronounced g cubed) is GEs game-changing alternative to SF 6 SF6 gas, developed for HV electrical transmission equipment. g³ G3 products feature the same ratings and same dimensional footprint as the state-of-the-art SF 6 SF6 ones, with a drastically reduced environmental impact: more than 99% less gas global warming potential (GWPWhat is GE’s g3?g³, (pronounced g cubed) is GEs game-changing alternative to SF6 gas, developed for HV electrical transmission equipment.Is there an alternative gas to SF6 for HV equipment?Yes, there is GE’s green gas for grids, g3 pronounced gcubed that is GEs game-changing alternative to SF6 gas, developed for HV electrical transmi...Can I replace SF6 by g3 in existing HV equipment?Direct retrofit is not possible. However, retrofits could be possible in some specific cases, though not with strictly identical performance or ope...Is GE’s g3 gas dangerous or toxic?GE’s g3 green gas is an inorganic, colorless, odorless, non- flammable, non-toxic gas, exactly like SF6.Does GE have SF6-free switchgear?GE’s manufactures g3 high voltage products as an alternative to SF6. These products are type-tested and available for live-tank circuit breakers an...

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  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with

    The impact of the O2 content in SF6-O2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been

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  • Comparison of etching processes of silicon and

    Reactive ion etching of Si and Ge in SF 6 –O 2 is investigated. Etch rate shows that Si etching is selective with respect to Ge in SF 6 –O 2 (O 2 ≪50%); the reverse is observed in SF 6 –O 2 (O 2...

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  • Byproducts of Sulfur Hexafluoride (SF6) Use in the

    Byproducts of Sulfur Hexafluoride (SF 6) Use in the Electric Power Industry Prepared for U.S. Environmental Protection Agency Office of Air and Radiation

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  • Deep reactive ion etching of in situ boron doped LPCVD Ge0

    Oct 01, 2013This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge 0.7 Si 0.3 alloy in SF 6 and O 2 plasma. The effect of RF power, SF 6 flow, O 2 flow and temperature on the etch rate of Ge 0.7 Si 0.3 films with a boron concentration of 2.1 × 10 21 atoms/cm 3 is investigated.Cited by: 1

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  • XPS study on dry etching of Si/Ge x Si 1−x - ScienceDirect

    Feb 01, 1995Reactive ion etching characteristics of epitaxial Ge 0.25 Si 0.75 in SF 6 /O 2 /He plasma has been investigated by X-ray photoelectron spectroscopy. Compositional information like Ge/Si and O/F ratios in the reaction layers on both horizontal and sidewall areas have been determined.

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  • The Southampton Nanofabrication Centre

    SF6/C4F8/Ar/O2 gases; Etch rates typically of 2um/min at 5um, 7um/min at 80um; 90+1&, 20nm rms sidewall roughness, Aspect ratio - PR30:1, SiO260:1; Reactive Ion Etching. The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source to chemically ion etch the material of the samples.

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  • MAINTENANCE OF SF6 GAS CIRCUIT BREAKERS - OIL AND

    SF6 shows little change in vapor pressure over a wide temperature range and is a soft gas in that it is more compressible dynamically than air. The heat transfer coefficient of SF6 is greater than air and its cooling characteristics by convection are about 1.6 times air.

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  • Desorption of Kr (or Kr85) and SF6 from Vitreous and

    The diffusion and solubility coefficients of He in various inorganic glasses are well known, while only few data for Ne and Ar are available (1–6). Kr and SF6, a fairly inert and nearly spherical...

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  • Commercialization of Specialized Nanotechnology

    Jun 16, 2016IBM 7HV Technology Transfer • 0.18µ technology was transferred in 8 months • Two customers completed silicon runs during the transfer period • Significant number of devices from Logic, HV, Analog, RF, Mix-Signal

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  • NIST: Electron-Impact Cross Section Database - Table of

    *References to other calculations and experimental measurements for each molecule are shown under the graph for that molecule.

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  • Deep reactive ion etching of in situ boron doped LPCVD

    Ge 0.7Si 0.3 Etch selectivity Resonator abstract This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chem-ical vapor deposited Ge 0.7Si 0.3 alloy in SF 6 and O 2 plasma. The effect of RF power, SF 6 flow, O 2 flow and temperature on the etch rate of Ge 0.7Si 0.3 films with a boron concentration

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  • GE Global Research Electronics Sensing

    Expertise to transfer process to external volume manufacturing facilities Todd Miller, Commercial Leader | [email protected] | www.geglobalresearch.com Electronics Sensing Process Capabilities GE Global Research Ti, TiW, Ta, oxides, nitrides with O2, SF6, Cl2, CF4, Ar, NF3, CHF3 Ashers (5) Barrel and down stream capability with

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  • Processes | Utah Nanofab

    Allwin 610 RTP/RTA with O2, N2, Ar, H2 forming gas, 200-1250C; ETCH RIE and DRIE. STS Aspect ICP DRIE: time-multiplex Si etch (anti-footing) Oxford Plasmalab 100+ ICP time-multiplex cryo DRIE SF6, CF4, CHF3, O2, Ar, Cl2, HBr, N2; Oxford Plasmalab 80+ multipurpose (SF6, CF4, O2, Ar) Technics PEII H2O, O2 descum resist strip

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  • SF6 Circuit Breaker: What Are They? (Types and Operation

    Oct 23, 2020Due to its low gaseous viscosity, SF6 gas can efficiently transfer heat by convection. So due to high dielectric strength and high cooling effect, SF 6 gas is approximately 100 times more effective arc quenching media than air.

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  • Effects of ambient pressures, He and Sf6 on O2 and CO2

    The CO2 and O2 tnesions were determined in the air cells of 14-16 day old chicken eggs before and after transfer to a 21% O2 in He or SF6 atmosphere. In the former gas mixture the air-cell PCO2 (which reflects the arterialized blood PCO2) fell rapidly from 32 torr in air to 17 torr in He-O2 attaining a new steady state in 2-4 h.Cited by: 23

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  • SF6-alternative gases for application in gas-insulated

    Mar 20, 2018The environmental problems caused by greenhouse gases have received unprecedented attention. Sulfur hexafluoride (SF 6), which is the preferred gas for use in gas-insulated switchgear (circuit breakers, disconnect switches, etc. for high-voltage electrical circuits), has a very high global warming potential, and there is a large international effort to find alternative gases.

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  • Application of fluoronitrile-based alternative gas to SF6

    It is a strategic goal for RTE to significantly lower the CO2 footprint of its assets in the future and therefore to reduce the use of SF6. In collaboration with GE Grid Solutions, RTE installed the first 63 kV GIS switchgear which runs with an environmentally friendly gas mixture based on C4F7N, CO2 and O2 named g3, at the Grimaud substation in the gulf of Saint-Tropez, south of France.

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  • The structural and optical properties of black silicon by

    Nov 03, 2014Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF 6 and O 2 at non-cryogenic temperatures. The structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively. The optical

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  • SF6 Circuit Breakers - Construction, Types and Working

    In an SF6 Circuit breaker, sulphur hexafluoride gas is used as the arc quenching medium.. The sulphur hexafluoride gas (SF6) is an electronegative gas and has a strong tendency to absorb free electrons. The contacts of the breaker are opened in a high-pressure flow sulphur hexafluoride (SF6) gas and an arc is struck between them.

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  • Etching – E6Nano

    Etching is a process for pattern transfer and surface treatment in micro-nano device fabrication. (SF6, Ar, O2, N2) Bypassed gas line and MFC for toxic gas (Cl2, BCl3, HBr) This XeF2 can etch Si and Ge isotropically and offers excellent selectivity to various materials such as

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  • Absorption spectra of atmospheric gases in the IR, visible

    pressure broadening). This poses a major problem in computing the transfer of IR radiation through the atmosphere with varying pressure, temperature, and amount of gases. Figure 7.1 Example of high spectral resolution transmission spectra of a one-meter path

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  • The Stanford Nanofabrication Facility

    SF6, C4F8, O2, Ar 4 in (6”*) 1 Flexible (All Classes*) STS Si SF6, C4F8, O2 4 in 1 BackEnd MOS STS HRM Si SF6, C4F8, O2 4 in 1 BackEnd MOS Etcher Materials Etched Gases available Wafer Size Maximum Load Size Cleanliness Applied Materials 8100 SiO2, SiN, Si, PR O2, CHF3, SF6, Ar, NF3 4 in 24 BackEnd MOS Drytek 100

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  • Interactions between placental O2 and CO transfer, Journal

    Interactions between placental O2 and CO transfer Interactions between placental O2 and CO transfer G. H. Gurtner , R. J. Traystman , and B. Burns 1982-02-01 00:00:00 02 CO transfer G. H. R. J. B. Departments of Medicine, Anesthesiology Critical Care Medicine, Environmental Health Sciences, The Johns Hopkins Medical Institutions Baltimore City Hospitals, Baltimore, Maryl 21205 ments indicate

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  • ICP Etcher (SI 500 324 From SENTECH) | PTA | Upstream

    - Available gases : HBr, BCl3, Cl2, SiCl4, CF4, CH2F2, CHF3, SF6, O2, Ar, N2, H2, CH4 . Load-lock sytem with automatic transfer to the plasma chamber. Substrate holder : - 4 wafer (need a carrier wafer for smaller sample size) - Cooling system : Mechanical

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  • high-voltage 160 switchgear Maintance rental

    high-voltage 160 switchgear Maintance rental. Preventive Maintenance Services | High Voltage Maintenance Maintenance Services. Its natural for electrical equipment to degrade over time, but it doesnt necessarily have to fail.

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  • Xuezhi Ma - Postdoctoral Researcher - Texas AM - LinkedIn

    The surface roughness of the Ge after RIE can be sufficiently reduced by introducing SF6-O2 etching steps into the CF4-O2 etching process, while maintaining a relatively large ratio of vertical...Title: Postdoctoral Researcher at Texas

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  • Integration of Disruptive Materials for Advanced Non

    or process transfer services to high volume partners Custom Process Flows Fast Transfer Services Ge Pb Tm Md Bi No Lu Lr Br I At Ti W Co Ni Cu As Xe Rn Ca Sr Ba Sc Y La Zr Hf V Nb Ta Cr Mo Mn Fe Ru Ir Gd Pd Pt Tb Ag Dy Zn In Er Sn Sb Yb Te Se Kr Po Rb 22. O2,SF6,He,O2 Chamber B (250C): DSQ O2, H20 BCl3,Cl2, Ar Chamber B (65C):

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  • Christoph Henkel – Applikateur/Test Engineering – Bosch

    The sulfur hexafluoride/oxygen (SF6/O2)-based cryogenic process allows etching of nanopillars with an aspect ratio higher than 20:1 and diameters down to 30 nm. Diameters can be further reduced by a well-controllable oxidation process in O2-ambient and a subsequent etching in hydrofluoric acid.Title: Applikateur bei Bosch

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  • NNCI ETCH Workshop -Stanford NNCI PlasMA Etch

    • Ar ions etch using momentum transfer. Ge SF6, C4F8, O2 ICP stsetch2 Si SiGe, Ge SF6, C4F8, O2 ICP uetch SiO2 - isotropic Varied HF vapor and ethanol Vapor etching Xactix Si, Ge, SiGe- isotropic XeF2, N2 Vapor etching Plasmaetch, PE-50 Phoresist Surface treatment Air RIE

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  • Octahedral Sulfur Hexafluoride - SF6 - Oh

    Click the buttons labelled with Symmetry Operations below to view in 3D . O h point group contains 3 C 4, 4 C 3, 9 C 2, 4 S 6, 3 S 4, 3 σ h, 6 σ d and a centre of inversion

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  • Silicon nitride and silicon etching by CH3F/O2 and CH3F

    Ge k Ge k Si n Ge n S Ge S; (1) where k Ge and k Si are electron inelastic mean free paths of 2.35 and 2.20nm (Refs. 13–15) in Ge and Si, respectively, h is the angle between the sample surface and the axis of the photoelectron collection lens ðh¼90 here), and n Ge and n Si are the atom densities for Ge

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  • UW NNCI Site - Tool List

    Process gases: BCl3, Cl2, H2, N2, O2, CH4, SF6, and Ar. A heated stage allows etching at substrates temperatures up to 250 C. 100mm wafers only. Smaller sizes can be accomodated using a 100mm silicon wafer as a carrier wafer. NOTE: As of 4/8/2019, ICP-C process chamber is heated to 60C.

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  • Equipment - uni-kassel.de

    - Semiautomatic sample transfer via central chamber, hydrogen cracker (H) - Very god layer thickness homogeneity, temperature homogeneity and doping homogeneity - Ultra high vacuum (10E-10 - 10E-11 mbar) - In-situ control using RHEED - Material Reactor C: Ga, In Al, As 2, P 2, Si, Be - Material Reactor D: Si, Ge…

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  • Nano Fabrication and Process Capability – E6Nano

    IV and II-VI group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber. (SF6, Ar, O2, N2) Bypassed gas line and MFC for toxic gas (Cl2, BCl3, HBr) This XeF2 can etch Si and Ge isotropically and offers excellent selectivity to various materials such as Al, SiO2, Si3N4 and

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  • Eray Aydil | NYU Tandon School of Engineering

    Research Interests: My group and I are interested in electronic, optoelectronic, magnetic, and catalytic materials synthesis and characterization with emphasis on understanding synthesis-structure-property-performance relations. We are motivated by fundamental questions as well as applications such as sustainable solar-to-electric energy conversion using solar cells.

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  • 10.1016/0167-9317(94)00061-X | DeepDyve

    Jun 11, 2020We observe clear exitonic emission from the SiGe wires. The subtractive technique combines high-resolution electron-beam lithography with reactive-ion-etching pattern transfer. Our anisotropic process is based on SF6/O2-plasma etching at a reduced substrate temperature of -20&C. We fabricate strhctures with lateral widths from 4 lam down to 50 nm.

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  • ECS Journal of Solid State Science and Technology, Volume

    Simulation based on the transfer matrix method showed that the porous SiO 2 (n = 1.25)/Al ODR gave the normal incidence reflectance of 95.4% at 365 nm, whereas the conventional SiO 2 (n = 1.49)/Al and ITO/Al reflectors have the normal incidence reflectance of 93.8% and 79%, respectively. The UV-LED with different reflectors had a forward

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  • 10.2: VSEPR Theory - The Five Basic Shapes - Chemistry

    The VSEPR Model. The VSEPR model can predict the structure of nearly any molecule or polyatomic ion in which the central atom is a nonmetal, as well as the structures of many molecules and polyatomic ions with a central metal atom.

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  • Simulation and experiment on the catalytic degradation of

    The high-temperature effect gas SF 6 is used in the power industry, and its emissions are increasing daily. Therefore, the degradation of SF 6 is particularly important. In this work, SF 6 with a high concentration of 2% was degraded using the catalytic principle of TiO 2 under UV light at normal temperature and pressure. Experimental results proved that this method can effectively degrade SF 6.

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  • WO1996029529A1 - An integrated gas panel - Google Patents

    A novel integrated gas panel (200) is described. The integrated gas panel of the present invention, comprises a plurality of individual process gas modules (300) or blocks coupled together with a plurality of gaskets located between them. Each process gas module comprises an upstream isolation valve (304) coupled between a process gas inlet (302) and a MFC inlet (306).

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  • Refractive index of Ar (Argon) - Bideau-Mehu

    Transfer 25, 395-402 (1981) 2) T. Larsén. Beitrag zur Dispersion der Edelgase. Z. Physik 88, 389-394 (1934) * Sellmeier formula is derived by the authors of ref. 1 using their own data in the 0.1404-0.2537 μm range combined with data from ref. 2 at longer wavelengths. Data

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  • Alcatel-602E-Etcher-56456 | Bridge Tronic Global

    At Bridge Tronic Global, we have Alcatel 602E Etcher 56456 available for sale. Please contact us at [email protected] or + 1-949-396-1395.

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  • What is the volume of Mars atmosphere? - Quora

    Marss atmosphere weighs 25,000,000,000,000,000 kg as compared to Earth’s atmosphere at 5,148,000,000,000,000,000 kg. Which means Mars atmosphere is 1/206th that of Earth’s. The volume is best expressed as scale height where Mars is 11.1 km vs. Ea...

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  • Single Wire O2 Sensors | Products Suppliers |

    G. Craciun, H. Yang, M.A. Blauw, E. van der Drift and P.J. French, “ Single step cryogenic SF6/ O2 plasma etching process for the development of a novel quad beam gyroscope”, Proceeding MME 02, Sinaia, Romania, October 2002, pp 55 D.

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  • Refractive index of SF6 (Sulphur hexafluoride) - Vukovic

    Radiat. Transfer 92, 293-310 (2005) *Ref. 2 provides a dispersion formula based on data from Ref. 1. Data [Expressions for n] [CSV - comma separated] [TXT - tab separated] [Full database record] Optical transmission calculator

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  • TiO2-Based Gas Sensor: A Possible Application to SO2 | ACS

    Fixation of SO2 molecules on anatase TiO2 surfaces with defects have been investigated by first-principles density functional theory (DFT) calculations and in situ Fourier transform infrared (FTIR) surface spectroscopy on porous TiO2 films. Intrinsic oxygen-vacancy defects, which are formed on TiO2(001) and TiO2(101) surfaces by ultraviolet (UV) light irradiation and at elevated temperatures

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